A Comparative Simulation Study of DG-MOSFETs: PCMS Approach in FETMOSS vs. CMS in Silvaco TCAD

Abstract

The simulation of quantum transport in DG-MOSFETs could be effectively accomplished by the Partial-Coupled Mode Space (PCMS) approach, which is realized by separating the odd and even modes solutions. This technique combines the merits of Coupled Mode Space (CMS) regarding the accuracy and Uncoupled Mode Space (UMS) as far as reducing computational time is concerned. In this work, a comparison study between PCMS using our developed FETMOSS simulator and CMS using Silvaco TCAD is carried out. The simulation is performed on a set of short-channel DG-MOSFETs. The accuracy at room temperature is found to be less than 8% along the whole range of the supply voltage. Based on this study, the PCMS approach in FETMOSS simulator is validated and proved to trace device performance in reasonable times compared to the TCAD high computational times.