Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory

Abstract

In the post-Moore era, integrated circuits based on complementary metal oxide semiconductor (CMOS) are faced with the energy bottleneck. Spintronics is recognized as one of the most promising technologies for overcoming this issue. Here we focus on two emerging spintronic devices, double-barrier double-free-layer magnetic tunnel junction (DDMTJ) and ring-shaped racetrack memory (RM), which can be used for building ultra-high-density non-volatile memories and logic-in-memory circuits. A systematic study has been carried out from device level to system level. Through increasing density and reducing data traffic distance, the performance and energy of the memory and logic applications can be improved significantly.