TEM/HREM of Ti/Al and WNi/Ti/Al ohmic contacts for n-AlGaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, Q. Lui, S. Lau
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引用次数: 1

Abstract

High resolution and analytical transmission electron microscopy was applied to characterize the microstructure of Al/Ti and W/Al/Ti ohmic contacts to AlGaN/GaN HFET structures. Formation of a 15-25 nm thick interfacial AlTi/sub 2/N layer appears to be essential for ohmic contract behavior indicating a tunneling contact mechanism. Contact resistance was found to depend on the structure and composition of the metal and AlGaN layers, and on atomic structure of the interface. Contact resistivity increases with Al fraction in the AlGaN layer.
n-AlGaN的Ti/Al和WNi/Ti/Al欧姆接触的TEM/HREM
采用高分辨透射电镜和分析电镜对AlGaN/GaN HFET结构中Al/Ti和W/Al/Ti欧姆接触的微观结构进行了表征。形成15- 25nm厚的AlTi/sub -2 /N界面层似乎对欧姆收缩行为至关重要,这表明了隧道接触机制。接触电阻取决于金属层和AlGaN层的结构和组成,以及界面的原子结构。接触电阻率随AlGaN中Al含量的增加而增加。
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