Experimental equipment to investigate deep energy levels in semiconductor barrier structures with high leakage current

Abstract

In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline and non-crystalline semiconductors with large rectifying junction area and high leakage currents. This modified equipment allows to define DL parameters such as ionization energy, cross section and concentration in the wide temperature range 7…500К, relaxation time range 10 μs…10 s, maximum barrier capacitance till 2000 pF, relaxation current amplitude range 10 pА…10 mА.