Silicon Photopotential Relaxation In Different-Composition Electrolytes

Abstract

Diagnostics of microimpurities, adsorbed ions, and particles at the semiconductor surface can be based on the influence of these particles upon the structure of the semiconductor surface levels and upon relaxation processes through the levels. The most important dependence of the surface recombination rate upon the surface state may be determined by the time of the semiconductor photopotential relaxation in different-composition electrolytes. This nondestructive technique enables to control the surface state and observe the sorption dynamics at the surface and, in particular, photosorption of metal ions and complex compounds.