{"title":"PROFET II-a second generation family of smart power switches","authors":"J. Hancock","doi":"10.1109/EAIT.1990.205480","DOIUrl":null,"url":null,"abstract":"A second generation family of smart power switches is described. PROFET switches are PROtected high side FET switches comprised of a vertical N-channel power MOSFET transition, with drive and protection functions implemented using high and low voltage CMOS logic. Functional diagrams, construction details, and chip technology are described. Device options are described which tailor operating characteristics to specific applications. Finally, the functional waveforms and protection capabilities are shown for typical automotive application circuits.<<ETX>>","PeriodicalId":321250,"journal":{"name":"IEEE Workshop on Electronic Applications in Transportation","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Workshop on Electronic Applications in Transportation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EAIT.1990.205480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A second generation family of smart power switches is described. PROFET switches are PROtected high side FET switches comprised of a vertical N-channel power MOSFET transition, with drive and protection functions implemented using high and low voltage CMOS logic. Functional diagrams, construction details, and chip technology are described. Device options are described which tailor operating characteristics to specific applications. Finally, the functional waveforms and protection capabilities are shown for typical automotive application circuits.<>