Evaluation of Photosensitive Performance of Different Structured UTBB MOSFET

Liqiao Liu, Xiaoyan Liu, G. Du
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Abstract

This paper provided a photosensitive performance evaluation of UTBB MOSFET with different structures. The UTBB MOSFET can achieve photosensitive function by integrating a doping well or photodiode under the BOX. With doping well under the BOX, the UTBB MOSFET is more sensitive to light. On the other hand, the saturation exposure time of UTBB with photodiode is longer.
不同结构UTBB MOSFET的光敏性能评价
本文对不同结构的UTBB MOSFET进行了光敏性能评价。UTBB MOSFET可以通过在BOX下集成掺杂阱或光电二极管来实现光敏功能。由于在BOX下掺杂良好,UTBB MOSFET对光更敏感。另一方面,带光电二极管的UTBB的饱和曝光时间更长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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