Glimpses of 3D Vector based Membrane Photolithography

S. Patil
{"title":"Glimpses of 3D Vector based Membrane Photolithography","authors":"S. Patil","doi":"10.17762/ijnpme.v11i1s.116","DOIUrl":null,"url":null,"abstract":"In optical lithography, decline in the profundity of centre has become an intense issue, alongside the trouble in improving goal. In memory chip creation, the advancement of stage move cover (PSM) innovation is promising to conquer these issues. Notwithstanding PSM innovation, some super-goal lithographic applications have likewise been proposed. In the later methodology, no PSMs are required, in this manner a portion of the challenges concerning cover innovation can be maintained a strategic distance from. Be that as it may, it isn't in every case simple to apply PSM or super-goal advancements to muddled cover designs, for example, for ASIC, chip rationale IC's. For fine occasional examples, a high spatial frequency upgrading channel is utilized with annular enlightenment. With sideways occurrence enlightenments, light shafts which are significantly diffracted by veil examples can go through the viewpoint student, in this way, the band-width of the spatial frequency transmission qualities of the focal point framework is expanded. The student channel smothers the transmission of direct bars concerning the diffracted pillars, improving the picture differentiates in the high frequency locale. Thorough re-enactments run rapidly on a workstation for complex 20 customary and stage moving covers, substrate bleaching, and optical metrology and arrangement issues.","PeriodicalId":297822,"journal":{"name":"International Journal of New Practices in Management and Engineering","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of New Practices in Management and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17762/ijnpme.v11i1s.116","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In optical lithography, decline in the profundity of centre has become an intense issue, alongside the trouble in improving goal. In memory chip creation, the advancement of stage move cover (PSM) innovation is promising to conquer these issues. Notwithstanding PSM innovation, some super-goal lithographic applications have likewise been proposed. In the later methodology, no PSMs are required, in this manner a portion of the challenges concerning cover innovation can be maintained a strategic distance from. Be that as it may, it isn't in every case simple to apply PSM or super-goal advancements to muddled cover designs, for example, for ASIC, chip rationale IC's. For fine occasional examples, a high spatial frequency upgrading channel is utilized with annular enlightenment. With sideways occurrence enlightenments, light shafts which are significantly diffracted by veil examples can go through the viewpoint student, in this way, the band-width of the spatial frequency transmission qualities of the focal point framework is expanded. The student channel smothers the transmission of direct bars concerning the diffracted pillars, improving the picture differentiates in the high frequency locale. Thorough re-enactments run rapidly on a workstation for complex 20 customary and stage moving covers, substrate bleaching, and optical metrology and arrangement issues.
基于三维矢量膜光刻技术的一瞥
在光刻技术中,光刻中心深度的下降一直是一个突出的问题,同时也困扰着光刻精度的提高。在记忆体晶片制造中,舞台移动盖(PSM)的革新有望克服这些问题。除了PSM的创新,一些超目标光刻应用也被提出。在后一种方法中,不需要psm,通过这种方式,可以保持与覆盖创新有关的部分挑战的战略距离。尽管如此,将PSM或超目标进步应用于混乱的外壳设计并不是在每个情况下都很简单,例如,对于ASIC,芯片基本原理IC。对于一些特殊的例子,采用了高空间频率升级信道和环形启蒙。通过侧面发生启示,由面纱样例明显衍射的光轴可以穿过视点学生,这样就扩大了焦点框架的空间频率传输质量的带宽。学生通道抑制了衍射柱的直接杆的传输,提高了高频区域的图像区分。在工作站上对复杂的20个习惯和舞台移动覆盖物,基材漂白,光学计量和安排问题进行彻底的重新制定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信