Specific features of SiC-IGBT with 13kV switching

Abstract

Switching behavior of a 4H-SiC IGBT is discussed considering the punch-through effect of the base layer. The switching behavior is investigated with a mixed-mode simulation of a 2D-numerical device simulator, where extremely abrupt switching characteristics are observed at voltage ratings of 6.5kV and 13kV. The origin is explained by the carrier dynamics under the punch-through condition. As a proof of this explanation, the switching behaviors are reproduced by circuit simulation with the compact IGBT model HiSIM-IGBT, where the punch-through behavior is considered.