Enhanced surface segregation in sliding wear tracks

R. Kothari, R. Vook, J.G. Zhang, M.D. Zhu
{"title":"Enhanced surface segregation in sliding wear tracks","authors":"R. Kothari, R. Vook, J.G. Zhang, M.D. Zhu","doi":"10.1109/HOLM.1989.77914","DOIUrl":null,"url":null,"abstract":"The effect of sliding wear on the rate of surface segregation of sulfur from an OFHC copper sample was investigated. This work was carried out in an ultra-high vacuum system having a residual gas pressure of 5*10/sup -11/ torr. Wear tracks were formed on OFHC Cu that had previously been annealed and argon-ion sputter cleaned. A bent pin was made to slide across the surface with a contact force of 25 g for 9000 cycles. No surface segregation was observed to occur as a result of forming the wear track. Subsequent in situ isothermal annealing between 310 degrees C and 470 degrees C produced S enhancement on the specimen surface. It was observed that the rate of S segregation on the wear track was much faster than off track up to approximately 390 degrees C, where this rate decreased significantly. At higher temperatures, the rate of S segregation on track approximately equaled the off-track rate. The drop in the rate of S segregation on the track at 390 degrees C is interpreted as due to annealing-out of the short-circuit diffusion paths associated with the defects formed when the wear track was made. The subsequent increase in S concentration at higher temperatures is due to the normal surface segregation phenomenon which occurs in annealed samples.<<ETX>>","PeriodicalId":441734,"journal":{"name":"Proceedings of the Thirty Fifth Meeting of the IEEE Holm Conference on Electrical Contacts","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Thirty Fifth Meeting of the IEEE Holm Conference on Electrical Contacts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HOLM.1989.77914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The effect of sliding wear on the rate of surface segregation of sulfur from an OFHC copper sample was investigated. This work was carried out in an ultra-high vacuum system having a residual gas pressure of 5*10/sup -11/ torr. Wear tracks were formed on OFHC Cu that had previously been annealed and argon-ion sputter cleaned. A bent pin was made to slide across the surface with a contact force of 25 g for 9000 cycles. No surface segregation was observed to occur as a result of forming the wear track. Subsequent in situ isothermal annealing between 310 degrees C and 470 degrees C produced S enhancement on the specimen surface. It was observed that the rate of S segregation on the wear track was much faster than off track up to approximately 390 degrees C, where this rate decreased significantly. At higher temperatures, the rate of S segregation on track approximately equaled the off-track rate. The drop in the rate of S segregation on the track at 390 degrees C is interpreted as due to annealing-out of the short-circuit diffusion paths associated with the defects formed when the wear track was made. The subsequent increase in S concentration at higher temperatures is due to the normal surface segregation phenomenon which occurs in annealed samples.<>
滑动磨损轨迹表面偏析增强
研究了滑动磨损对OFHC铜样品中硫表面偏析速率的影响。这项工作是在残余气体压力为5*10/sup -11/ torr的超高真空系统中进行的。在经过退火和氩离子溅射清洗的OFHC Cu上形成了磨损痕迹。一个弯曲的销在表面上以25g的接触力滑动9000次。没有观察到由于形成磨损痕迹而产生的表面偏析。随后在310℃至470℃之间进行原位等温退火,试样表面产生S增强。在390℃左右,S偏析在磨损轨迹上的速率比在磨损轨迹外的速率快得多,但在磨损轨迹外,S偏析速率显著降低。在较高温度下,轨道上的S偏析速率近似等于轨道外的S偏析速率。390℃时轨道上S偏析速率的下降可以解释为由于与磨损轨道形成时形成的缺陷相关的短路扩散路径的退火。随后在较高温度下S浓度的增加是由于退火样品中发生的正常表面偏析现象。
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