Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493689

M.S. Islam, P. McNally, D. Cameron, P. Herbert

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引用次数: 4

Abstract

A non-alloyed Pd/Sn ohmic contact on n-GaAs has been developed. Metallization samples are: annealed at various temperatures and systematically characterized using Energy Dispersive Analysis of X-rays (EDAX), Secondary Ion Mass Spectrometry (SIMS) and current-voltage (I-V) measurements. Contact resistivities, /spl rho//sub c/, of the proposed metallization are measured utilizing a transmission line model (TLM) method. Annealing at 360/spl deg/C for 30 min yielded the lowest /spl rho//sub c/ of /spl sim/3.26/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ on 2/spl times/10/sup 13/ cm/sup -3/ n-GaAs with a Pd(300 /spl Aring/)/Sn(1500 /spl Aring/) contact. The EDAX spectra show a correlation between Ga signal peaks and measured /spl rho//sub c/ values at various annealing temperatures. The contact depth profiles are analyzed by SIMS. The effect of metallization thickness on contact properties are also presented. The mass spectrometer analysis confirms the formation of PdGa and SnGa compounds at the lowest /spl rho//sub c/ condition.

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利用电测量、EDAX和SIMS表征n-GaAs上Pd/Sn欧姆接触

在n-GaAs上制备了一种非合金Pd/Sn欧姆触点。金属化样品:在不同温度下退火，并使用x射线能量色散分析(EDAX)，二次离子质谱(SIMS)和电流-电压(I-V)测量系统地表征。采用传输线模型(TLM)方法测量金属化的接触电阻率/spl rho//sub c/。在360/spl℃下退火30分钟，得到了Pd(300 /spl Aring/)/Sn(1500 /spl Aring/)接触的最低/spl rho//sub // // spl sim/3.26/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ on / 2/spl times/10/sup 13/ cm/sup -3/ n-GaAs。EDAX光谱显示了不同退火温度下Ga信号峰值与测量值/spl rho//sub c/之间的相关性。利用SIMS对接触深度进行了分析。研究了金属化厚度对接触性能的影响。质谱分析证实PdGa和SnGa化合物在最低/spl rho//sub c/条件下生成。

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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