Nonlinear distortions and excess noise behavior of fused InGaAs/Si avalanche photodiode

2002 International Topical Meeting on Microwave Photonics Pub Date : 1900-01-01 DOI:10.1109/MWP.2002.1158883

Y. Kang, P. Mages, A. Clawson, A. Pauchard, S. Hummel, M. Bitter, Z. Pan, Y. Lo, P. Yu

引用次数: 1

Abstract

We present measurements results of the two-tone intermodulation distortions in a fused InGaAs/Si avalanche photodiode that has potentially high gain and low excess noise performance.

查看原文本刊更多论文

熔融InGaAs/Si雪崩光电二极管的非线性畸变和过量噪声行为

我们给出了具有潜在高增益和低过量噪声性能的InGaAs/Si熔接雪崩光电二极管中双音互调失真的测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2002 International Topical Meeting on Microwave Photonics

自引率

0.00%

发文量