Variable taper CMOS buffer design

S. Vemuru, E. Smith
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引用次数: 4

Abstract

A variable taper (VT) approach is proposed for the design of CMOS buffers. The minimum propagation delay obtained by using a VT buffer is approximately 12% higher than the minimum propagation delays obtained by using a conventional fixed taper (FT) approach. A modification to the initial stages of a VT buffer reduces this difference to within 2% of a FT buffer. For buffer designs with similar propagation delays, a VT buffer design usually takes significantly less silicon area and dissipates less power.<>
可变锥度CMOS缓冲器设计
提出了一种可变锥度(VT)的CMOS缓冲器设计方法。使用VT缓冲器获得的最小传播延迟比使用传统的固定锥度(FT)方法获得的最小传播延迟高约12%。对VT缓冲器初始阶段的修改将这一差异减少到FT缓冲器的2%以内。对于具有相似传播延迟的缓冲器设计,VT缓冲器设计通常占用更少的硅面积和更低的功耗。
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