Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346811

T. Irisawa, T. Numata, T. Tezuka, N. Sugiyama, S. Takagi

引用次数: 30

Abstract

Electron transport properties in biaxially strained UTB MOSFETs and uniaxially strained tri-gate MOSFETs are experimentally investigated. It is found that the strain is still effective even in UTB regime and the mobility enhancement of 1.4 against control thick (20 nm) SOI is preserved in devices with TSoi = 2.4 nm. We also demonstrate 2.0x mobility enhancement in tri-gate nMOSFETs with uniaxial <110> tensile strain that is favored not only on (100) but also on (110) sidewall

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双轴应变和单轴应变下超薄体和三栅SOI nmosfet的电子输运特性

实验研究了双轴应变UTB mosfet和单轴应变三栅极mosfet的电子输运特性。研究发现，即使在UTB条件下，应变仍然有效，并且在TSoi = 2.4 nm的器件中，对控制厚度(20 nm) SOI的迁移率提高了1.4。我们还证明了具有单轴拉伸应变的三栅极nmosfet的2.0倍迁移率增强，这不仅有利于(100)侧壁，也有利于(110)侧壁

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 International Electron Devices Meeting

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