Quantitative Discussion on Sensitivity to Terahertz Waves of Detectors Made of MOSFET and High-Electron Mobility Transistor

Abstract

A newly developed circuit model is presented to describe detection characteristic of square law detectors made of an FET under non-quasistatic condition. Sensing performance calculated using formulae derived from the model agrees well with results of experiment carried out to detect 1.0 THz waves using InAs-channel high-electron mobility transistor (HEMT). The model predicts that HEMT offers much higher voltage sensitivity to terahertz waves than Si MOSFET even for miniaturized devices.