Realization of compact Continuous Wave-based X-Band Power Amplifier using GaN device for Data Transmitter Applications

Abstract

Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.