The Comparative Study of Using Si and Te Doping Tunnel Junction of Vertical Hetero-structure Laser Photovoltaic Cell

Abstract

Heavy doping of epitaxial tunnel junction layers is of interest in vertical hetero-structure laser photovoltaic cell in recent years. In this paper, the performance characteristic of AlGaAs/GaAs tunnel junctions with silicon(Si) and tellurium (Te) doped were presented, respectively. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance and better performance. A comparative study using both Si and Te doping in the AlGaAs/GaAs tunnel junction of six junctions monochromatic laser photovoltaic cells also showed a higher photoelectric efficiency for Te doping. Therefore, the tunnel junction with Te doping can be considered to improve the performance of monochromatic laser cells.