Modelling of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) of silicon in SiH/sub 2/Cl/sub 2/-HCl-H/sub 2/ system

Abstract

A semi-empirical model for the growth rate of selective epitaxial silicon (SEG) in the dichlorosilane HCl-H/sub 2/ system was obtained from 820-1020/spl deg/C and 40-150 Torr and over a range of gas flows and pressures. The growth rate expression was considered to be the sum of a growth term, dependent on the partial pressures of dichlorosilane and hydrogen, and an etch term that varies as the partial pressure of HCl. The growth and etch terms were found to have an Arrhenius relation with temperature, with activation energies of 52 kcal/mol and 36 kcal/mol respectively.