Control of the Deposition Ratio of Bi2Te3 and Sb2 Te3 in a Vacuum Evaporator for fabrication of Peltier Elements

L. Gonçalves, J. G. Rocha, J. Correia, C. Couto
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引用次数: 5

Abstract

This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb 2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2degC between their hot and cold junctions, when measured at free air conditions
在真空蒸发器中制备Peltier元素的Bi2Te3和sb2te3沉积比的控制
本文报道了制备珀尔帖元素用Bi2Te3和sb2te3薄膜共蒸发的主要问题及相应的解决方法。这个主要问题在于控制两种元素的沉积速率:Bi或Sb和Te,这两种元素具有非常不同的蒸汽压。沉积比的控制是通过PID控制器实现的,该控制器允许制造薄膜Peltier元件,当在自由空气条件下测量时,在其热结和冷结之间产生2摄氏度的温度梯度
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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