The impact of FinFET technology scaling on critical path performance under process variations

Abstract

Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.