Low Cost Grounding Integration for Surface Ion Trap

Abstract

Si substrate provide the integration platform for surface ion trap device fabrication. Grounding metal for the surface ion trap is necessary because of high RF voltage ($> 100\mathrm{V}$) applied and lower RF loss required within functionality. High resistivity Si substrate with floating metal grounding and low-grade Si substrate with connected grounding metal were integrated with surface ion trap. Ion trap resonance curves were observed at 47.1 MHz frequency for ion trap devices with different grounding metal. The curves have similar resonant power.