Performance Analysis of Dynamic Threshold-Voltage CNTFET for High-Speed Multi-level Voltage Detector

S. Bari, Subrata Biswas, A. Arifuzzman, Habib Muhammad Nazir Ahmad, N. Hasan
{"title":"Performance Analysis of Dynamic Threshold-Voltage CNTFET for High-Speed Multi-level Voltage Detector","authors":"S. Bari, Subrata Biswas, A. Arifuzzman, Habib Muhammad Nazir Ahmad, N. Hasan","doi":"10.1109/UKSim.2012.98","DOIUrl":null,"url":null,"abstract":"The main objective of this paper is to design a novel threshold voltage detector circuit using carbon nanotube field effect transistor (CNTFET). This circuit is simulated in HSPICE by using HSPICE model of CNTFET. The uniqueness of this proposed circuit is that the threshold voltage of each CNTFET decides each voltage detection level where as in CMOS implementation a complex band-gap reference circuit is needed to produce a reference voltage level for precise detection. MOSFETs with different threshold voltage can also be used to implement this idea but that would add a new Vth mask for each different voltage detection level which will increase the process cost significantly. Therefore this new proposed CNTFET based voltage level detection circuit can produce much improved performance with significant reduction in implementation complexity by both saving number of mask set and reducing the chip area significantly.","PeriodicalId":405479,"journal":{"name":"2012 UKSim 14th International Conference on Computer Modelling and Simulation","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 UKSim 14th International Conference on Computer Modelling and Simulation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UKSim.2012.98","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The main objective of this paper is to design a novel threshold voltage detector circuit using carbon nanotube field effect transistor (CNTFET). This circuit is simulated in HSPICE by using HSPICE model of CNTFET. The uniqueness of this proposed circuit is that the threshold voltage of each CNTFET decides each voltage detection level where as in CMOS implementation a complex band-gap reference circuit is needed to produce a reference voltage level for precise detection. MOSFETs with different threshold voltage can also be used to implement this idea but that would add a new Vth mask for each different voltage detection level which will increase the process cost significantly. Therefore this new proposed CNTFET based voltage level detection circuit can produce much improved performance with significant reduction in implementation complexity by both saving number of mask set and reducing the chip area significantly.
用于高速多级电压检测器的动态阈值电压CNTFET性能分析
本文的主要目的是利用碳纳米管场效应晶体管(CNTFET)设计一种新的阈值电压检测器电路。利用CNTFET的HSPICE模型在HSPICE中对该电路进行了仿真。该电路的独特之处在于每个CNTFET的阈值电压决定每个电压检测电平,而在CMOS实现中,需要一个复杂的带隙参考电路来产生精确检测的参考电压电平。具有不同阈值电压的mosfet也可用于实现此想法,但这将为每个不同的电压检测电平添加新的Vth掩模,这将显着增加工艺成本。因此,本文提出的基于CNTFET的电压电平检测电路在节省掩模集数量和显著减小芯片面积的同时,显著降低了实现复杂度,从而大大提高了电路的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信