A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628249

A. Metzger, C.E. Chang, P. Asbeck, K. Wang, K. Pedrotti, A. Price, A. Campana, D. Wu, J. Liu, S. Beccue

引用次数: 10

Abstract

A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.

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采用AlGaAs/GaAs异质结双极晶体管实现的10gb /s 12x12交叉点开关

报道了一种12x12交叉点交换机，其每通道数据速率为10gb /s。该开关的聚合数据速率为120gb /s，是所有IC中最高的之一。该电路基于AlGaAs/GaAs HBT技术，并采用双交换架构来最小化抖动。rms抖动低于4秒已被证明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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