Design and development of high power SP9T switch

Abstract

This paper presents design and development of High Power RF SP9T switch at L-Band for data link application. The design can withstand full reverse power under fault conditions. SP9T configuration is achieved through a two stage combination of SP3T switches. The design uses PIN diodes in tuned shunt configuration, one in 1st stage and two in 2nd stage to achieve high isolation. Shunt diode configuration along with λ/4 section of transmission line provides low Insertion Loss (IL).Design challenges and implementation schemes have been discussed. The Maximum insertion loss measured was 1.2 dB and isolation of 53 dB over the band of operation. Simulation and measured results are in good agreement. The switch is used in Electronic beam switching antenna for data link communication.