A 21-39.5 GHz Power Amplifier for 5G Wireless Systems in 22 nm FD-SOI CMOS

2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI:10.1109/APMC46564.2019.9038202

Xin Xu, P. V. Testa, Songhui Li, László Szilágyi, W. Finger, C. Carta, F. Ellinger

引用次数: 3

Abstract

This paper presents a high-gain broadband power amplifier for 5G wireless systems, which provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD-SOI technology. The circuit is based on two stacked amplifier stages which are connected with lumped-element matching networks. For a power consumption of 228 mW from a 2.4 V voltage supply, the amplifier provides 25 dB of peak gain, maximum saturated output power of 16.8 dBm, output power in 1 dB gain-compression of 13 dBm, and maximum power-added-efficiency of 19.8%. The power amplifier compares well against previously reported designs by showing the highest measured gain and gain-bandwidth product while still having comparable performance in the other figures of merit.

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用于5G无线系统的22 nm FD-SOI CMOS 21-39.5 GHz功率放大器

本文提出了一种用于5G无线系统的高增益宽带功率放大器，该放大器在21 GHz至39.5 GHz范围内提供10 dB以上的增益，并采用22 nm FD-SOI技术实现。该电路基于两个堆叠放大器级，并通过集总元匹配网络连接。在2.4 V电压下，该放大器功耗为228 mW，峰值增益为25 dB，最大饱和输出功率为16.8 dBm, 1 dB增益压缩输出功率为13 dBm，最大附加功率效率为19.8%。该功率放大器通过显示最高的测量增益和增益带宽产品，与先前报道的设计相比表现良好，同时在其他方面仍然具有相当的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE Asia-Pacific Microwave Conference (APMC)

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