{"title":"COMSOL modeling of Hall sensors efficiency","authors":"I. Ruskova, E. Gieva, V. Yantchev, M. Hristov","doi":"10.1109/ET.2017.8124384","DOIUrl":null,"url":null,"abstract":"In this paper we present a finite element analysis routine for modeling of semiconductor Hall sensors. Their efficiency is studied varying the base semiconductor material. More specifically, 2D COMSOL semi-conductor model is initially employed to extract the properties of the conductive channel. Subsequently a 3D COMSOL DC model is used to perform the studies regarding the Hall sensor efficiency. Hall sensors of identical topology and doping levels are studied in a comparative manner.","PeriodicalId":127983,"journal":{"name":"2017 XXVI International Scientific Conference Electronics (ET)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 XXVI International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2017.8124384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
In this paper we present a finite element analysis routine for modeling of semiconductor Hall sensors. Their efficiency is studied varying the base semiconductor material. More specifically, 2D COMSOL semi-conductor model is initially employed to extract the properties of the conductive channel. Subsequently a 3D COMSOL DC model is used to perform the studies regarding the Hall sensor efficiency. Hall sensors of identical topology and doping levels are studied in a comparative manner.