{"title":"Measurement of Channel Length and Off-set Region Length for Off-set Gate MOSFETs","authors":"K. Terada, K. Tsuji, Y. Itoh, M. Takahashi","doi":"10.1109/ESSDERC.1997.194513","DOIUrl":null,"url":null,"abstract":"This paper proposes an extraction method of both the channel length and the off-set region length, which is defined as the channel length of the JFET formed there, for off-set gate MOSFETs. The influence of MOSFET in the JFET current measurement is removed by extrapolating the gate bias of the MOSFET to infinity. Experimental data confirm that this extraction method can accurately determine both channel lengths.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"349 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper proposes an extraction method of both the channel length and the off-set region length, which is defined as the channel length of the JFET formed there, for off-set gate MOSFETs. The influence of MOSFET in the JFET current measurement is removed by extrapolating the gate bias of the MOSFET to infinity. Experimental data confirm that this extraction method can accurately determine both channel lengths.