A Compact Low Noise Amplifier with Defected Microstrip Structure for Ultra-Wideband Communications

N. Saifullah, Z. Zakaria, Sam Weng Yik, N. Hassan, N. Shairi
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Abstract

In this paper, an ultra-wideband (UWB) low noise amplifier (LNA) with notch filter is presented. The proposed LNA implements a passive notch filter in the form of U-Shaped defected microstrip structure (DMS) to eliminate the interference in WLAN band at 5 – 6 GHz. This design is based on negative feedback and inductive source degeneration which gradually increase the stability while providing wideband characteristic as well as gain flatness throughout the frequency band. Furthermore, this design implemented a multi-section quarter wave transformer as wideband matching which to improve the input and output matching. The LNA has been fabricated on FR4 substrate microstrip. The measured gain is better than 10 dB, a noise figure of 1.9 – 3.8 dB with a return loss of less than 8 dB. The interference rejection managed to achieve more than 25 dB at 5.5 GHz. This proposed structure is useful for RF/microwave front-end subsystems, especially in interference rejection.
一种用于超宽带通信的微带缺陷结构的紧凑型低噪声放大器
提出了一种带陷波滤波器的超宽带低噪声放大器。该LNA采用u型缺陷微带结构(DMS)形式的无源陷波滤波器来消除5 - 6ghz频段的干扰。该设计基于负反馈和电感源退化,在提供宽带特性和整个频带增益平坦性的同时逐渐增加稳定性。此外,本设计还实现了多段四分之一波变压器作为宽带匹配,以改善输入输出匹配。在FR4衬底微带上制备了LNA。测量增益优于10db,噪声系数为1.9 ~ 3.8 dB,回波损耗小于8db。干扰抑制在5.5 GHz时达到25 dB以上。这种结构对射频/微波前端子系统非常有用,特别是在抗干扰方面。
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