N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira
{"title":"Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures","authors":"N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira","doi":"10.1109/IEDM.2018.8614674","DOIUrl":null,"url":null,"abstract":"We report an electric-field-induced interface dipole modulation (IDM) in HfO<inf>2</inf>/1-ML TiO<inf>2</inf>/SiO<inf>2</inf> MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO<inf>2</inf>/SiO<inf>2</inf> MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO2/SiO2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.
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