Exploring the cross-section dimension and related characteristics in the design of new rectangular SI-GAA Junction-less

Abstract

In this artical, we investigate the achievement characteristics of the silicon gate-all-around junction-less transistor (Si-GAAJLT) with a 3D quantum transport effect. The simulation has been designed using SILVACO-TCAD tools at 22 nm gate length to explore the influence of varying rectangular cross-section dimensions (High and width) on the threshold voltage, SS, ION and IOFF current, and ION/IOFF ratio. This device presents an interesting performance, the higher $\mathrm{ON}/\mathrm{OFF}$ ratio is obtained for Hfin= Wfin $=10\mathrm{~nm}$.