A Vertical Structured Solar-blind Ultraviolet Photodetector Based on the Carbon Nanodot/Graphene Heterojunction

Taihao Chen, Yong Fang, Chifeng Song, Keyang Zhang, Yifan Gao, Zikang Han, Zhiwei Zhao
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Abstract

The vertical structured heterojunction has been highlighted as a promising candidate for the solar-blind Ultraviolet (UV) Photodetector (PD) due to the control of its channel length and the strong electric field induced high carrier mobility. Meanwhile, Carbon Nanodots (CNDs) have drawn great attention to be playing an essential role in the active layer of the PD. However, CND based solar-blind UV PDs, independent from sophisticated manufacturing method and extreme process conditions, has yet to be well developed. Herein, for the very first time, a vertical structured CNDs/graphene heterojunction type solar-blind UV PD is introduced, in which the CNDs is used as the photosensitive layer and the graphene is used as the transparent electrode, implemented with a low-cost and low-complexity fabrication strategy of CNDs. The device exhibits extraordinary responsivity of19.11 mA/W, normalized detectivity of $4.60\times 10^{10}$ Jones and on/off ratio of 342 at low bias voltage of -5V under the illumination of1.5 mW/cm2 by 254 nm wavelength. The results show that this work has unlocked the critical bottleneck of developing a solar-blind UV PD with higher non-solar-blind ultraviolet signals rejection ratio, higher responsivity, and detectivity, unveiling the potential for missile warning, flame detection, and other areas of interest.
基于碳纳米点/石墨烯异质结的垂直结构日盲紫外探测器
垂直结构异质结由于其通道长度的控制和强电场诱导的高载流子迁移率而成为太阳盲紫外光电探测器(PD)的一个有前途的候选者。同时,碳纳米点(CNDs)在PD的活性层中起着重要的作用,引起了人们的广泛关注。然而,基于CND的太阳盲UV pd,不依赖于复杂的制造方法和极端的工艺条件,尚未得到很好的发展。本文首次介绍了一种垂直结构的CNDs/石墨烯异质结型太阳盲UV PD,其中CNDs用作光敏层,石墨烯用作透明电极,实现了低成本和低复杂性的CNDs制造策略。该器件在-5V的低偏置电压下,在1.5 mW/cm2的254 nm波长照射下,具有19.11 mA/W的高响应度,4.60\ × 10^{10}$ Jones的归一化检出率和342的通断比。结果表明,这项工作已经解开了开发具有更高非太阳盲紫外线信号抑制比、更高响应性和探测性的太阳盲UV PD的关键瓶颈,揭示了导弹预警、火焰探测和其他感兴趣领域的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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