Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

Abstract

Carrier generation by impact ionization in SOI MOSFETs as a function of the strength of channel coupling, adjusted by varying the back gate bias or the silicon film thickness, was extensively studied by extensive PISCES numerical simulations. The results show that stronger front/back channel coupling results in lower carrier generation, and consequently, lower hot carrier degradation. Experimental measurements of the substrate current and hot carrier device degradation verified these results. At the same time, however, the stronger channel coupling results in a lower value for the single-transistor latch-up voltage V/sub DLU/. The above observations mean that there is a trade-off between hot carrier degradation and single transistor latch-up voltage in SOI MOSFETs.