Characterization of silicon nanowires grown by electroless etching

Abstract

Silicon nanowires (SiNWs) were created using the electroless etching technique using silver nitrate (AgNO3)/hydrofluoric acid (HF) solution. More than 200 samples were created using various methods, concentrations and techniques, producing some consistent results and revealing some random properties. SEM images were taken of many samples, showing various stages of growth and the results of the various techniques used to grow the SiNWs. These images and experiments show that previous notions on the growth of SiNWs may be misunderstood. The experiments performed and the images taken show that SiNWs growth process is highly randomized, starting at the beginning of the etch with no SiNWs, and ending with SiNWs branching away from a centralized agglomeration made up of corrugated, ribbonized Silicon (Si). Process and SEM stage images are provided, including dendrite blankets.