80 GHz AlGaAs HBT oscillator

Abstract

This paper describes an 80 GHz monolithic fundamental frequency oscillator using an AlGaAs heterojunction bipolar transistor technology. The transistor performs a unity current gain frequency f/sub T/=130 GHz and a maximum frequency of oscillation f/sub max/=180 GHz. The output signal level of the oscillator is -9 dBm, and the SSB phase noise is estimated as -80 dBc/Hz at 1 MHz offset frequency. A couple of coplanar waveguides are utilized for resonators.