A novel MMIC PHEMT low noise amplifier for GPS applications

H. Morkner, M. Frank, R. Kishimura
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引用次数: 16

Abstract

A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<>
一种用于GPS应用的新型MMIC PHEMT低噪声放大器
研制了一种单片两级伪晶高电子迁移率晶体管(PHEMT)低噪声放大器(LNA),用于全球定位系统(GPS)和0.5 ~ 3.0 GHz的扩频频段。该放大器使用Avantek的PHEMT器件,栅极长度低于0.2 μ m,该频段噪声系数为0.25 db。该放大器的独特之处在于它采用了源跟随器第二级、电阻反馈和片上匹配。测得增益为15db,噪声系数为1.7 dB。设计适合于塑料86或SOT-143表面贴装封装,模具小,吸取低电流,利用低电压,并且没有偏置扼流圈要求
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