{"title":"A novel MMIC PHEMT low noise amplifier for GPS applications","authors":"H. Morkner, M. Frank, R. Kishimura","doi":"10.1109/MCS.1992.185985","DOIUrl":null,"url":null,"abstract":"A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<>