M. Nakatsugawa, A. Kanda, H. Okazaki, K. Nishikawa, M. Muraguchi
{"title":"Line-Loss and Size Reduction Techniques for Millimeter-Wave RF Front-End Boards by Using a Polyimide/Alumina-Ceramic","authors":"M. Nakatsugawa, A. Kanda, H. Okazaki, K. Nishikawa, M. Muraguchi","doi":"10.1109/MWSYM.1997.602843","DOIUrl":null,"url":null,"abstract":"This paper proposes a concept for constructing low- loss and small-size millimeter-wave RF front-end boards by using a polyimide/alumina-ceramic multilayer configuration. The thick polyimide layer enables us to design low-loss wide microstrip lines (MS's). Moreover, the board size can be reduced by compactly arranging all RF and dc lines in the intermediate layers of the polyimide/alumina-ceramic substrate. The size of a prototype board designed for the quasi-millimeter-wave region is 30 mm 30 mm. In experiments, it showed 23.2-dB linear gain and 7.4-dBm RF output power in transmitter (TX) mode, and 3.1-dB linear gain and 20.1-dBm IF output power in receiver (RX) mode. These performance levels agree well with predicted values. This paper further discusses applications to the integration of passive circuits fabricated in the substrate. The proposed configuration has enough potential to integrate all monolithic microwave integrated circuit (MMIC) chips, dc-bias integrated circuits (IC's), and passive circuits, and can improve the total performance in terms of the RF characteristics, board size, and fabrication cost. conductor wafers and lead to cost reduction. They adopt thin polyimide layers to form thin film microstrip lines (TFMS's). Their patterning flexibility on the semiconductor chip makes it possible to design various kinds of functional circuits and to connect them within a small area, and results in fabrication of multifunctional one-chip MMIC's (3). Nevertheless, it is difficult to integrate circuits fabricated by different device processes into one circuit module because all unit circuits in a 3-D MMIC share the same semiconductor substrate. The ability to integrate different types of active devices improves the total circuit performance and increases the field of 3-D","PeriodicalId":226779,"journal":{"name":"Intelligent Memory Systems","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Intelligent Memory Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1997.602843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper proposes a concept for constructing low- loss and small-size millimeter-wave RF front-end boards by using a polyimide/alumina-ceramic multilayer configuration. The thick polyimide layer enables us to design low-loss wide microstrip lines (MS's). Moreover, the board size can be reduced by compactly arranging all RF and dc lines in the intermediate layers of the polyimide/alumina-ceramic substrate. The size of a prototype board designed for the quasi-millimeter-wave region is 30 mm 30 mm. In experiments, it showed 23.2-dB linear gain and 7.4-dBm RF output power in transmitter (TX) mode, and 3.1-dB linear gain and 20.1-dBm IF output power in receiver (RX) mode. These performance levels agree well with predicted values. This paper further discusses applications to the integration of passive circuits fabricated in the substrate. The proposed configuration has enough potential to integrate all monolithic microwave integrated circuit (MMIC) chips, dc-bias integrated circuits (IC's), and passive circuits, and can improve the total performance in terms of the RF characteristics, board size, and fabrication cost. conductor wafers and lead to cost reduction. They adopt thin polyimide layers to form thin film microstrip lines (TFMS's). Their patterning flexibility on the semiconductor chip makes it possible to design various kinds of functional circuits and to connect them within a small area, and results in fabrication of multifunctional one-chip MMIC's (3). Nevertheless, it is difficult to integrate circuits fabricated by different device processes into one circuit module because all unit circuits in a 3-D MMIC share the same semiconductor substrate. The ability to integrate different types of active devices improves the total circuit performance and increases the field of 3-D