High-accuracy estimation of soft error rate using PHYSERD with circuit simulation

Abstract

Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate. We find that circuit simulation has a significant effect on these contributions and is essential to the prediction of soft error rate.