Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments

Abstract

Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.