A Generalized Nonlinear Model of 1-bit PIN-diode Based Transmitarray Unit Cell

V. Kirillov, P. Turalchuk
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Abstract

This paper presents the results of an analysis of the nonlinear distortions in the transmitarray unit cell caused by the control element. The model of a unit cell with a one-bit PIN diode phase shifter was developed, to evaluate the loss and third-order intermodulation products dependencies on an applied voltage. The unit cell was manufactured and measured to prove the model simulation results. Measurements results of the transmission coefficient modules and third-order intermodulation products level as function of input power for different bias voltages are in a good agreement with the simulated results. It allows using this model for the estimation of the linear and nonlinear performance of the transmitarray.
基于1位pin二极管的发射阵列单元的广义非线性模型
本文介绍了由控制元件引起的发射阵列单元的非线性畸变的分析结果。建立了具有1位PIN二极管移相器的单元电池模型,以评估损耗和三阶互调产物对外加电压的依赖关系。制作并测量了单元胞,验证了模型的仿真结果。不同偏置电压下传输系数模块和三阶互调积电平随输入功率的变化的测量结果与仿真结果吻合较好。它允许使用该模型来估计发射阵列的线性和非线性性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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