J. Lo, A. Kaiz, L. Therese, B. Caillier, P. Guillot, L. Latrasse
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引用次数: 0
Abstract
Large scale industrial processes for surface treatment require uniform, dense, and quiescent plasma. One of the strategies in achieving this latter consists in distributing several microwave applicators forming a 2D or 3D network configuration 1, which permits plasma density exceeding the critical density $n_{c}$defined by $n_{c}=\omega _{0}^{2}m_{e}\varepsilon _{0}/e^{2}$with $\omega _{0}$the microwave angular frequency, $\varepsilon _{0}$the vacuum permittivity and $m_{e}$the mass of the electron. Furthermore, integrating microwave applicators designed without any need of complicated matching system proved to be interesting in order to achieve fine tuning of the plasma spatial distribution, hence uniform and dense plasma over large area 2.