Correction mask for large-area anti-reflection coatings deposited using a plasma-assisted reactive magnetron sputtering

C. Tang, Y. Chen
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Abstract

Comparison of simulated and experimental correction-mask for high-uniformity anti-reflection coatings on large-area substrates deposited using a plasma-assisted reactive magnetron sputtering. A mask for optimizing film-thickness uniformity designed using a simulation program was less than ±1.3%.
等离子体辅助反应磁控溅射大面积增透涂层的校正掩模
等离子体辅助反应磁控溅射大面积基底上高均匀性增透涂层的模拟与实验校正掩模比较。利用仿真程序设计的优化膜厚均匀性的掩膜小于±1.3%。
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