First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node

Abstract

For the first time, the oxide based resistive random access memory (OxRRAM) integrated at 14nm FinFET platform was demonstrated. The scalability potential towards 10nm and beyond was analysis by considering the programing voltage, current and stability factors. Negative bias scheme with deep N well was proposed to solve the voltage mismatch between the OxRRAM and transistor. In order to meet the product-level stability requirement, the operation current was suggested to be higher than 100uA. Based on such constrain, cell size at different technology is projected. As an attempt, a design rule and array architecture was proposed to implement the OxRRAM on 5nm FinFET platform.