Silicon and Silicon Carbide Avalanche Diodes for Use in Pulse Sharpening and Closing Switch Applications

Abstract

Summary form only given. The preliminary experimental results of an ongoing research effort are presented which focuses on numerical modeling, fabrication and utilization of silicon (Si) and silicon carbide (SiC) avalanche diodes (AD) in pulse sharpening and closing switch applications. The ultimate goal of the effort is to provide a source for components and designs for multi-kilovolt, low jitter, all solid-state ultra-wideband (UWB) microwave sources.