Design and performance of a 1.6-2.2GHz low-noise, high gain dual amplifier in GaAs E-pHEMT

Abstract

The design and realization of a dual low-noise amplifier (LNA) module in the 2GHz band suitable for balanced receiver front-end application is presented. The module was designed to operate from a 5V supply with a control voltage for convenient adjustment of bias condition for optimum noise figure. The MMIC portion of the design was fabricated in Agilent Technologies' proprietary 0.5/spl mu/m GaAs enhancement-mode pseudomorphic high-electron-mobility transistor (e-pHEMT) process. This module is suitable for balanced amplifier applications when combined with external 3-dB hybrids, giving an extremely low noise figure (NF) of 0.55-0.8dB, coupled with a moderately high OIP3 (output third order intercept point) of 38-42dBm at 28-32dB gain. It is also capable of delivering a P-1dB of more than 20dBm at 180mA current drain.