Maximizing performance and power density in PFC by using SMD packages with top-side cooling

Marco Papaserio, Domenico Nardo, D. Cavallaro, C. Stella, Stefano Orlando, Ludovica Longo, G. Sorrentino
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Abstract

This paper analyzes the efficiency of silicon MOSFETs in SMD packages with top-side cooling compared to bottom-side cooling packages in terms of thermal performance, lowering both thermal resistance and operating temperatures and improving switching performance due to the Kelvin pin. It will show how reducing the junction temperature helps to boost power efficiency due to a smoother variation of the main silicon MOSFET parameters due to temperature changes such as RDS(on) and VGSth level as well as reduces total conduction and switching losses.
通过使用顶部冷却的SMD封装,最大限度地提高PFC的性能和功率密度
本文分析了SMD封装中采用顶部冷却的硅mosfet与底部冷却封装在热性能方面的效率,降低了热阻和工作温度,并由于开尔文引脚而提高了开关性能。它将展示降低结温如何有助于提高功率效率,因为主要硅MOSFET参数由于RDS(on)和VGSth水平等温度变化而更平滑地变化,以及降低总导通和开关损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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