A silicon radio-frequency single electron transistor at 4.2K

Abstract

We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.