An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

Y. Fujihara, M. Murata, Shota Nakayama, R. Kuroda, S. Sugawa
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引用次数: 3

Abstract

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.
具有两级横向溢流集成沟槽电容的超过120dB动态范围线性响应单曝光CMOS图像传感器
本文介绍了一种具有两级横向溢流集成沟槽电容(LOFITreCs)的线性响应单曝光CMOS图像传感器原型,其动态范围超过120dB,满阱容量(FWC)为11.4Me,最大信噪比(SNR)为70dB。由于所提出的两级LOFITreCs,所有开关点的测量信噪比都超过35dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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