Modular Wideband 1–15 GHz Transmitter Channelizer for High Data Rate Communication

Abstract

This work presents a modular wideband transmitter channelizer for high data rate communication applications, manufactured in a 130 nm SiGe:C BiCMOS technology with fT / fmax= 300/500 GHz. Three independent I/Q baseband signals are upconverted to different intermediate frequencies and then bonded in current domain. A local oscillator leakage cancellation functionality is implemented on chip within the input stage to enhance the dynamic range. Single ended inputs were utilized in order to reduce the pin count, for a more practical realization and higher potential toward future system scaling. The transmitter channelizer achieves an output 3-dB bandwidth of 15 GHz. LO rejection of 74 dBc at the center frequency was measured after calibration. It dissipates 355 m Wand occupies 1.5 mm2. With these specifications the presented circuitry suits well as a practical solution for wideband channelization for high data rate transmission scenario's, such as THz and sub-THz communications applications, with a potential scaling-up to higher number of channels.