Energy-speed exploration for very-wide range of dynamic V-F scaling

Kleber Stangherlin, S. Bampi
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引用次数: 4

Abstract

Minimum-energy operation of digital CMOS circuits is commonly associated to the sub-VT regime, carrying huge performance and variability penalties. This paper shows that it is possible to achieve 8x higher energy-efficiency with a very-wide range of dynamic voltage-frequency scaling, from nominal voltages down to the lower boundary of near-VT operation. The cell-library is exercised in a 65nm commercial PDK and targets near-VT operation, mitigating the variability effects without compromising the design in terms of area and energy at strong inversion. The set of cells allows a maximum of 2-stacked transistors, and includes master-slave registers. We report results for medium complexity designs which include a 25kgates notch filter, a 20kgates 8051 compatible core, and 4-combinational/4-sequential ISCAS benchmark circuits. In this work the maximum frequency attainable at each supply for a wide variation of voltage is studied from 150mV up to nominal voltage (1.2V). The sub-VT operation is shown to hold the minimum energy-point at roughly 0.29V, which represents a 2x energy-saving compared to the near-VT regime. Although energy-efficiency peaks in sub-VT for the circuits studied, we also show that in this ultra-low Vdd the circuit timing and power suffer from substantially increased variability impact and a 30x performance drawback, with respect to near-VT.
大范围动态V-F标度的能量-速度探索
数字CMOS电路的最小能量操作通常与次vt状态有关,具有巨大的性能和可变性损失。本文表明,从标称电压到近vt操作的下边界,通过非常宽的动态电压-频率缩放范围,有可能实现8倍高的能源效率。该细胞库在65nm商用PDK中进行操作,目标是近vt操作,在不影响强反演时面积和能量设计的情况下减轻变异性影响。该单元集允许最多2个堆叠晶体管,并包括主从寄存器。我们报告了中等复杂度设计的结果,其中包括25kgates陷波滤波器,20kgates 8051兼容核心和4组合/4顺序ISCAS基准电路。在这项工作中,研究了从150mV到标称电压(1.2V)的各种电压变化下,每个电源可达到的最大频率。亚vt操作显示将最小能量点保持在大约0.29V,与近vt状态相比,这代表了2倍的节能。尽管所研究的电路的能效在亚vt达到峰值,但我们也表明,在这种超低Vdd下,电路时序和功率受到显著增加的可变性影响,并且相对于接近vt,性能缺陷为30倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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