Light triggered 8 kV thyristors with a new type of integrated breakover diode

Abstract

Light triggered 8 kV thyristors with a new type of integrated breakover diode were fabricated. This breakover diode is realized by a well-defined curvature of the junction between the p-base and the n-base. For this purpose, a "masked" Al diffusion is used. Five amplifying gate stages guarantee a safe turn-on behavior also in the case of overvoltage triggering. Additionally, a novel resistor structure, which is also controlled by the masked Al diffusion, was integrated between the amplifying gate stages.